厂商 ：苏州硅能半导体科技股份有限公司
江苏 苏州- 主营产品：
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商品详细描述
Source-Drain
Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
IS
Continuous Source Current
(Body Diode)
—
—
80
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
—
—
320
A
VSD
Diode Forward Voltage
—
0.85
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
36
—
ns
TJ = 25°C, IF =75A, di/dt = 100A/μs
Qrr
Reverse Recovery Charge
—
62
—
nC
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