厂商 ：苏州硅能半导体科技股份有限公司
江苏 苏州- 主营产品：
Description:
It utilizes the latest processing techniques to achieve
the high cell density and reduces the on-resistance with high repetitive avalanche
rating. These features combine to make this design an extremely efficient
and reliable device for use in power switching application and a wide
variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
200①
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
135①
IDM
Pulsed Drain Current②
750
PD @TC = 25°C
Power Dissipation③
220
W
Linear Derating Factor
1.5
W/°C
VDS
Drain-Source Voltage
40
V
VGS
Gate-to-Source Voltage
± 24
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
912
mJ
IAS
Avalanche Current @ L=0.3mH
78
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +175
°C
