TE53N50E

TE53N50E
TE53N50E代理  TE53N50E中文资料  
MOTOROLA TMOS 53安培，功率场效应晶体管500伏特的 RDS(on) = 0.080 OHM

深圳市南北行科技有限公司     联系电话：13316887805   QQ：2501633055
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
? 2500 V RMS Isolated Isotop Package
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? Very Low Internal Parasitic Inductance
? I DSS and VDS(on) Specified at Elevated Temperature
? U. L. Recognized, File #E69369