S2386-8K光电光敏滨松硅光电池

S2386-8K 光电光敏滨松硅光电池Hamamatsu
Visible to IR sensitivity, low dark current, For analytical instruments

参数名称                          数值
参数名称 封装                    TO-8
Active Area                      5.8 x 5.8 mm
光谱响应范围                     320 to1100 nm
峰值波长                         960 nm
Photo Sensitivity at peak        0.6 A/W
Dark Current Max.                0.05 nA
Rise Time                        10 us
Terminal Capacitance             4300 pF
Shunt Resistance                 10 Gohm
Note 
Measurement Condition Typ. Ta=25 deg. C, unless otherwise noted