HS517R 磁吸电容笔霍尔开关

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深圳市七悦科技有限公司，专业从事磁控霍尔开关的研发和销售。

深圳七悦科技为你海选海量完整的磁吸电容笔霍尔开关HS517R，支持在线实时询价。

General Description

The HS517R Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.

The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.This serves to place the high current-cons uming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the B OP/BRP thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems.

The output transistor of the HS517R will be latched on (BOP) in the presence of a sufficiently

strong South or North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of amagnetic field.It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.

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