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PD方案MOS VS3620
Dual N - Channel Enhancement Mode Power MOSFET 4504
DDAATTAASSHHEEEETT
PD方案MOS VS3620
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
|
Parameter |
Symbol |
Limit |
Unit |
|
Drain‐Source Voltage |
VDS |
45 |
V |
|
Gate‐Source Voltage |
VGS |
+20 |
V |
|
Drain Current @ Continuous(Note 2) |
ID（25℃） |
30 |
A |
|
ID（100℃） |
20 |
A |
|
|
Drain Current @ Current‐Pulsed (Note 1) |
IDM |
112 |
A |
|
Maximum Power Dissipation (TA=25℃) |
PD |
35 |
W |
|
Operating Junction and Storage Temperature Range |
TJ,TSTG |
‐55 To 150 |
℃ |
THERMAL CHARACTERISTICS
|
Thermal Resistance,Junction‐to‐Ambient (Note 2) |
RθJA |
35 |
℃/W |
PD方案MOS VS3620
The 4504 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
l RDS(ON) <22m? @ VGS=4.5V RDS(ON) <15m ? @ VGS=10V
l High Power and current handing capability
l Lead free product is acquired
l Surface Mount Package
Application
l PWM applications
l Load switch
l Power management
PD方案MOS VS3620
